160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
Collector Cut-Off Current (Icbo) |
50nA |
Collector-Emitter Breakdown Voltage (Vceo) |
160V |
Power Dissipation (Pd) |
300mW |
DC Current Gain (hFE@Ic,Vce) |
100@10mA,5V |
Collector Current (Ic) |
600mA |
Transition Frequency (fT) |
100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
200mV@50mA,5mA |
Transistor Type |
NPN |
Operating Temperature |
+150℃@(Tj) |