50+ |
¥0.052938
|
500+ |
¥0.047358
|
3000+ |
¥0.042271
|
6000+ |
¥0.040949
|
数量 |
|
45V 200mW 200@5mA,1V 100mA NPN TO-236-3 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
Collector Cut-Off Current (Icbo) |
50nA |
Collector-Emitter Breakdown Voltage (Vceo) |
45V |
Power Dissipation (Pd) |
200mW |
DC Current Gain (hFE@Ic,Vce) |
200@5mA,1V |
Collector Current (Ic) |
100mA |
Transition Frequency (fT) |
100MHz |
Transistor Type |
NPN |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
250mV@100mA,10mA |
Operating Temperature |
+150℃@(Tj) |