50V 320mW 100@10mA,1V 150mA NPN SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
100nA |
|
Collector-Emitter Breakdown Voltage (Vceo) |
50V |
|
Power Dissipation (Pd) |
320mW |
|
DC Current Gain (hFE@Ic,Vce) |
100@10mA,1V |
|
Collector Current (Ic) |
150mA |
|
Transition Frequency (fT) |
300MHz |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
300mV@5mA,50mA |
|
Transistor Type |
NPN |
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